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AssigneeLumilog
InventorsBernard Beaumont, Pierre Gibart, Jean-Claude Guillaume, Gilles Nataf, Michel Vaille, Soufien Haffouz
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The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching on in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.
Process for producing an epitaxial layer of gallium nitride (GaN), characterized in that it comprises the deposition on a substrate (1) of a dielectric layer (3) functioning as a mask and the regrowth of gallium nitride on the masked substrate under vapor phase epitaxial deposition conditions, said gallium nitride being doped with a doping agent chosen from the group consisting of magnesium, zinc, cadmium, beryllium, calcium, carbon, silicon and germanium, so as to induce the deposition of gallium nitride features and the anisotropic and lateral growth of said features (6), the lateral growth being continued until coalescence of the various features.
Process for producing an epitaxial layer of gallium nitride (GaN) according to one of the preceding claims, characterized in that the vapor phase epitaxial deposition conditions involve the use of a carrier gas preferably consisting of an N2/H2 mixture.
Dependencies are inferred from the claim text.