Integration of low epsilon thin films and Ta into Cu dual damascene
AssigneeDielectric Systems, Inc.
InventorChung J. Lee
Life of this patent
Estimating the term…
Abstract
New precursors and processes to generate fluorinated poly(para-xylylenes) (“PPX”) and their chemically modified films suitable for fabrications of integrated circuits (“ICs”) of <0.15 μm are disclosed. The films so prepared have low dielectric constants (“∈”) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.
Claims56
A polymer film suitable for fabrication of integrated circuit, the polymer film is prepared from co-polymerization, under vacuum or inert atmosphere with a slow system leakage rate, of intermediate (A) and intermediate (B);
- wherein the intermediate (A) is an aromatic compound consisting of n′ reactive sites with n′ unpaired electrons;
- wherein the n′ is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp2C substitution in the intermediate (A);
- wherein the intermediate (B) is a bridging compound consisting of n″ reactive sites with n″ unpaired electrons;
- and
- wherein the n″ is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp3C substitution in the intermediate (B).
An intermediate (A) made by a chemical process, under vacuum or inert atmosphere, from a precursor having a general chemical structure of (X′)m—Ar—(X″)n,
- wherein each of X′ and X″ is a leaving group, Ar is an aromatic compound connecting with n substitution-groups of X′ s and m substitution-groups of X″;
- and
- wherein each of n and m is independently 0 or an integer, and (n+m) is at least 2 but can equal to the total sp2C substitutions in the aromatic compound Ar.
An intermediate (A) made by a chemical process, under vacuum or inert atmosphere, from a precursor having a general chemical structure of (X′)m—Ar—(CZ′ Z″ Y)n,
- wherein each of X′ and Y is a leaving group, and Ar is an aromatic compound connecting with m substitution-groups of X′ s and n substitution-groups CZ′ Z″ Y′s;
- wherein each of Z′ and Z″ is H, F or —C6F5;
- and
- wherein each of n and m is independently 0 or an integer, and (n+m) is at least 2 but can equal to the total sp2C substitutions in the aromatic compound Ar.
An intermediate (B) made by a chemical process, under vacuum or inert atmosphere, from a precursor having a general chemical structure of X—C(Z′Z″), wherein X is a leaving group and each of Z′ and Z″ is independently H, F, or —C6F5.
A polymer film suitable for fabrication of integrated circuit made from co-polymerization or polymerization of at least two reactive intermediates, comprising fully-fluorinated or partially fluorinated polymers.
A semicrystalline polymer made by a chemical process from a precursor having a general chemical structure of (X′)m—Ar—(CZ′Z″Y)n,
- wherein each of X′ and Y is a leaving group, Ar is an aromatic compound connecting with m substitution-groups of X′ s and n substitution-groups of —(CZ′Z″Y);
- and
- wherein each of n and m is independently 0 or an integer, and (n+m) is at least 2 but can equal to the total sp2C substitutions in the aromatic compound Ar.
A method of making polymer thin films comprising:
- provision of a precursor vapors under vacuum or inert atmosphere, generation of reactive intermediates from the precursor vapor and transport the reactive intermediates to a substrate for film growth.
A system for deposition of thin films comprising:
- a precursor reservoir maintaining a reactor thereto for increasing the reactivity of the precursor, A diffusor;
- A cold trap and A pump.
A thin film transistor (TFT) in active matrix liquid crystal display (AMLCD) that consisting of thin film of this invention.
A. color filter in AMLCD that consists of thin film of this invention.
Dependencies are inferred from the claim text.