See attached list (k. yasui et al)
AssigneeHitachi, Ltd.
InventorsKAN YASUI, SOUICHI KATAGIRI, SHIGEO MORIYAMA, YOSHIO KAWAMURA, RYOUSEI KAWAI, SADAYUKI NISHIMURA, MASAHIKO SATO
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Abstract
A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.
Claims37
A method for fabricating a semiconductor device comprising a process for polishing a semiconductor wafer having a concave/convex patterned surface by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which said semiconductor wafer is pressed with relative motion to planarize said concave/convex pattern, wherein surface activation treatment for liberating said abrasive grains in said grindstone is applied.
A method for fabricating a semiconductor device comprising a process for polishing a semiconductor wafer having a concave/convex patterned surface by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which said semiconductor wafer is pressed with relative motion to planarize said concave/convex pattern, wherein said grindstone surface activation treatment includes transmission of ultrasonic wave or acoustic wave having a frequency of 10 kHz or higher to said grindstone.
A method for fabricating a semiconductor device comprising a process for polishing a semiconductor wafer having a concave/convex patterned surface by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which said semiconductor wafer is pressed with relative motion to planarize said concave/convex pattern, wherein a state of said polishing is detected and the condition of said grindstone surface activation treatment is controlled based on a value of the detected state of polishing.
A processing apparatus comprising;
- a first means for holding a semiconductor wafer having concave/convex pattern formed on the surface,
- a grindstone constituted of abrasive grains and material for holding the abrasive grains,
- a second means for pressing said semiconductor wafer surface onto said grindstone and for moving said semiconductor wafer surface relatively to said grindstone, and
- a third means served for surface activation treatment to liberate said abrasive grains in said grindstone.
A processing apparatus comprising;
- a first means for holding a semiconductor wafer having concave/convex pattern formed on the surface,
- a grindstone constituted of abrasive grains and material for holding the abrasive grains,
- a second means for pressing said semiconductor wafer surface onto said grindstone and for moving said semiconductor wafer surface relatively to said grindstone,
- a means for generating ultrasonic wave or acoustic wave having a frequency of 10 kHz or higher, and
- a means for transmitting said ultrasonic wave or acoustic wave to said grindstone.
A processing apparatus comprising;
- a first means for holding a semiconductor wafer having concave/convex pattern formed on the surface,
- a grindstone constituted of abrasive grains and material for holding the abrasive grains,
- a second means for pressing said semiconductor wafer surface onto said grindstone and for moving said semiconductor wafer surface relatively to said grindstone,
- a third means served for said grindstone surface activation treatment, and
- a truing unit.
A method for fabricating a semiconductor device comprising the steps of;
- applying surface activation treatment to a grindstone constituted of abrasive grains and material for holding said abrasive grains,
- supplying a liquid to said grindstone at a flow rate of not more than 0.14 ml/cm2 per minute per unit area of said grindstone, and
- polishing a semiconductor wafer by using said grindstone pressed onto the surface of said semiconductor wafer to planarize said semiconductor wafer surface.
A method for fabricating a semiconductor devices comprising the steps of;
- applying surface activation treatment on a grindstone constituted of abrasive grains and material for holding said abrasive grains,
- applying truing treatment to said grindstone, and
- polishing a semiconductor wafer by using said grindstone pressed onto the surface of said semiconductor wafer to planarize said semiconductor wafer surface.
A method for fabricating a semiconductor device comprising the steps of;
- polishing a semiconductor wafer by using a polishing pad onto which surface said semiconductor wafer is pressed with relative motion,
- supplying abrasive grains to the surface of said polishing pad from a solid abrasive grain supply source containing said abrasive grains, and
- planalizing a surface of a semiconductor wafer.
A method for fabricating a semiconductor device comprising the steps of;
- polishing a semiconductor wafer having concave/convex pattern on a surface thereof by using a polishing pad onto which surface said semiconductor wafer is pressed with relative motion,
- supplying abrasive grains to the surface of said polishing pad from aerosol of a liquid containing said abrasive grains, and
- planarizing said concave/convex pattern.
A method for fabricating a semiconductor device comprising the steps of;
- polishing a semiconductor wafer having concave/convex pattern on the surface thereof by using a polishing pad onto which surface said semiconductor wafer is pressed with relative motion,
- supplying abrasive grains to the surface of said polishing pad from aerosol of a liquid containing said abrasive grains, and
- planarizing said concave/convex pattern.
A method for fabricating a semiconductor device comprising the steps of;
- forming a film on a semiconductor substrate, and
- applying surface activation treatment for liberating abrasive grains to a grindstone constituted of abrasive grains and material for holding said abrasive grains, and
- polishing said film by using said grindstone onto which surface said semiconductor substrate is pressed thereby to planarize said film.
A method for fabricating a semiconductor device comprising the steps of;
- forming a trench to be served as an isolation region on a semiconductor substrate,
- forming a dielectric film in and on the periphery of said trench,
- polishing said dielectric film by using a grindstone onto which surface said semiconductor substrate is pressed while applying surface activation treatment for liberating said abrasive grains to said grindstone constituted of abrasive grains and material for holding said abrasive grains, and
- forming a field-effect transistor on a region other than said isolation region.
A processing apparatus comprising;
- a holding means for holding a polishing object,
- a grindstone constituted of abrasive grains and material for holding said abrasive grains,
- a means for pressing said polishing object on said grindstone with relative motion,
- a means for surface activation treatment for liberating said abrasive grains, and
- a means for controlled depth machining of said grindstone.
A processing apparatus comprising;
- a holding means for holding a polishing object,
- a grindstone including abrasive grains and bonding resin,
- a means for pressing said polishing object onto said grindstone with relative motion, and
- a solid abrasive grain supply source for supplying abrasive grains on the surface of said grindstone.
A processing apparatus comprising;
- a holding means for holding a polishing object,
- a grindstone including abrasive grains and bonding resin,
- a means for pressing said polishing object onto said grindstone with relative motion, and
- an abrasive grain supply source including gel of liquid or aerosol of liquid for supplying abrasive grains on the surface of said grindstone.
A processing apparatus comprising;
- a holding means for holding a polishing object,
- a polishing pad,
- a means for pressing said polishing object onto said polishing pad with relative motion, and
- a solid abrasive grain supply source for supplying abrasive grains onto the surface of said polishing pad.
A processing apparatus comprising;
- a holding means for holding a polishing object,
- a polishing pad,
- a means for pressing said polishing object onto said polishing pad with relative motion, and
- an abrasive grain supply source including gel of liquid or aerosol of liquid for supplying abrasive grains onto the surface of said polishing pad.
Dependencies are inferred from the claim text.