Semiconductor device manufacturing method
OwnerEiichi Soda, Ken Tokashiki +2inventors
InventorsEiichi Soda, Ken Tokashiki, Atsushi Nishizawa, Hidetaka Nanbu
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Abstract
A semiconductor device manufacturing method according to the invention includes a process for forming an insulating film made of organic material the dielectric constant of which is low and which has a relative dielectric constant lower than that of silicon oxide on a semiconductor substrate, a process for forming a resist film having an opening on the insulating film, a process for dry-etching the insulating film using the resist film as a mask and a process for removing at least a part of the resist film by ashing using the plasma of mixed gas including nitrogen and hydrogen.
Claims4
A semiconductor device manufacturing method, comprising:
- a process for forming an insulating film made of organic material the dielectric constant of which is low and which has a relative dielectric constant lower than that of silicon oxide on a semiconductor substrate;
- a process for forming a resist film having an opening on the insulating film;
- a process for dry-etching the insulating film using the resist film as a mask;
- and
- a process for removing at least a part of the resist film by ashing using the plasma of mixed gas including nitrogen and hydrogen.
Dependencies are inferred from the claim text.