Method of forming a semiconductor device

A method of processing a wafer, comprising:

• cleaning said wafer;
• growing an oxide on said wafer;
• cleaning said oxide;
• depositing additional oxide over said wafer;
• and
• providing a structure over said wafer.

A method of forming a semiconductor device, comprising:

• removing a constituent from a surface of said device;
• forming a first oxide over said surface;
• forming a second oxide over said surface;
• forming an electrode over said surface;
• and
• clustering said steps of removing a contaminant, providing a first oxide, providing a second oxide, and providing an electrode over said surface.

A method of processing a semiconductor device, comprising:

• performing a vapor clean on said device;
• growing a first amount of oxide on said device;
• depositing a second amount of oxide on said device;
• and
• forming a gate on said second amount of oxide.

A method of developing a topography in a substrate, comprising:

• growing a first layer of oxide from said substrate;
• cleaning said first layer;
• and
• growing a second layer of oxide from said substrate.

A method of providing an oxide having a first depth in a first region and a second depth in a second region, wherein said second depth is greater than said first depth, and wherein said method comprises:

• growing a first portion of oxide over said first region and said second region;
• thinning said first portion to said first depth;
• and
• growing a second portion of oxide over said second region.

A method of forming a gate for a semiconductor device, comprising:

• bonding contaminants at a level of said semiconductor device;
• providing an adhesion layer at a gate site on said level;
• forming a gate oxide made of tantalum pentoxide over said gate site;
• and
• providing a gate material over said gate oxide.

A method of forming a tunnel oxide of an in-process memory cell, comprising:

• removing contaminants from an area of said in-process memory cell;
• oxidizing said area for a first time;
• and
• oxidizing said area for a second time.

A method of developing a semiconductor device, comprising:

• cleaning a level of said semiconductor device;
• furnishing a first oxide layer at said level;
• cleaning said first oxide layer;
• furnishing a second oxide layer over said level;
• hardening said second oxide layer;
• and
• furnishing an electrode on said second oxide layer.

A conditioning method, comprising:

• providing a process device defining a process chamber;
• providing an object within said process chamber;
• and
• mixing H2 and O2 within said process chamber.

A method of affecting a leakage factor of a gated device, comprising:

• providing a process area;
• controlling clean-room-contaminant access to said process area;
• and
• operating on a wafer within said process area, further comprising:
• cleaning said wafer,
• providing a gate oxide on said wafer, and
• nitridizing said gate oxide within said process area.