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US 2002/0119673 A1Published application
Method and apparatus for forming material layers from atomic gasses
OwnerEllie Yieh, Li-Qun Xiainventors
Life of this patent
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Abstract
A method of forming material layers on a substrate using atomic gas is provided. A substrate is heated to an elevated temperature and is exposed to an atomic gas. The atomic gas reacts at a surface of the substrate to form a material layer thereon. The source of atomic gas preferably comprises a molecular gas source operatively coupled to a remote microwave plasma system that dissociates the molecular gas into highly reactive atomic gas. Gate quality silicon dioxide, oxynitride and silicon nitride may be formed by the dissociation of O2, O2 and N2 or NH3, and N2 or NH3, respectively, at reduced temperatures (e.g., about 600-650° C.).
Claims21
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- and
- growing a layer of material on the substrate with the atomic gas.
3 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas and positioned so as to create a reduced path length from the remote plasma source to the elevated temperature substrate, thereby reducing formation of molecular gas from atomic gas as the atomic gas travels from the remote plasma source to the elevated temperature substrate;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- and
- growing a layer of material on the substrate with the atomic gas.
3 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- reducing the formation of molecular gas from the atomic gas by spatially separating gas atoms of the atomic gas as the atomic gas is transferred from the source of atomic gas to the elevated temperature substrate;
- and
- growing a layer of material on the substrate with the atomic gas.
4 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- reducing the formation of molecular gas from the atomic gas by coating at least a portion of a path between the source of atomic gas and the substrate with a material that reduces a number of available atomic gas recombination sites;
- and
- growing a layer of material on the substrate with the atomic gas.
4 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate to a temperature of less than about 650° C.;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- and
- growing a layer of material on the substrate with the atomic gas at a temperature of less than about 650° C.
3 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas and positioned so as to create a reduced path length from the remote plasma source to the elevated temperature substrate, thereby reducing formation of molecular gas from atomic gas as the atomic gas travels from the remote plasma source to the elevated temperature substrate;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- further reducing the formation of molecular gas from the atomic gas by spatially separating gas atoms of the atomic gas as the atomic gas is transferred from the source of atomic gas to the elevated temperature substrate;
- and
- growing a layer of material on the substrate with the atomic gas.
4 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas and positioned so as to create a reduced path length from the remote plasma source to the elevated temperature substrate, thereby reducing formation of molecular gas from atomic gas as the atomic gas travels from the remote plasma source to the elevated temperature substrate;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- further reducing the formation of molecular gas from the atomic gas by:
- spatially separating gas atoms of the atomic gas as the atomic gas is transferred from the source of atomic gas to the elevated temperature substrate;
- and
- coating at least a portion of a path between the source of atomic gas and the substrate with a material that reduces a number of available atomic gas recombination sites;
- and
- growing a layer of material on the substrate with the atomic gas.
7 more elements
A method of forming a material layer on a substrate, comprising:
- providing a substrate on which a material layer is to be grown;
- elevating the temperature of the substrate to a temperature of less than about 650° C.;
- providing a source of atomic gas, the source of atomic gas comprising a remote plasma source coupled to a source of molecular gas;
- transferring atomic gas from the source of atomic gas to the elevated temperature substrate;
- reducing the formation of molecular gas from the atomic gas by:
- spatially separating gas atoms of the atomic gas as the atomic gas is transferred from the source of atomic gas to the elevated temperature substrate;
- and
- coating at least a portion of a path between the source of atomic gas and the substrate with a material that reduces a number of available atomic gas recombination sites;
- and
- growing a layer of material on the substrate with the atomic gas at a temperature of less than about 650° C.
7 more elements
Dependencies are inferred from the claim text.