Plasma etching apparatus and plasma etching method
OwnerToshio Masuda, Kazue Takahashi +3inventors
InventorsTOSHIO MASUDA, KAZUE TAKAHASHI, MITSURU SUEHIRO, TETSUNORI KAJI, SABURO KANAI
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OwnerToshio Masuda, Kazue Takahashi +3inventors
InventorsTOSHIO MASUDA, KAZUE TAKAHASHI, MITSURU SUEHIRO, TETSUNORI KAJI, SABURO KANAI
Estimating the term…
A plasma processing method includes the steps of evacuating a vacuum vessel by an evacuation system, introducing a processing gas into the vacuum vessel, disposing an object or example to be processed within the vacuum vessel, supplying electrical bias power to a lower electrode within the vacuum vessel, radiating a high frequency electromagnetic wave within the vacuum vessel, and causing said processing gas to change into a plasma for performing processing of the object to be processed. The vacuum vessel includes a processing chamber having a sidewall and subjecting the sidewall to temperature control so that the temperature of the sidewall is controlled so as to be maintained within ±10° C. in a range of 20 to 80° C.
A plasma processing method including the steps of:
A plasma processing method for changing a CF-based processing gas into a plasma for use in performing processing of a sample to be processed, comprising the step of:
A plasma processing method for changing a CF-based gas into a plasma for use in performing processing of an object to be processed, comprising the steps of:
A plasma processing method for changing a CF-based gas into a plasma for use in performing processing of an object to be processed, comprising the step of controlling a temperature of an inner wall of a processing chamber which in contact with the plasma so as to be maintained within ±10° C. in a range of 20 to 80° C.
Dependencies are inferred from the claim text.