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US 2002/0119661 A1Published application
Method of manufacturing semiconductor device and method of manufacturing optical wave guide
AssigneeFujitsu Quantum Devices Limited
InventorsTakayuki Watanabe, Hiroaki Ito, Takuya Fujii
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, includes the steps of (a) growing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an etchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.
Claims40
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) growing an InP layer on a surface of starting growth, resulting in the InP layer hating a convex structure;
- and
- (b) wet etching the InP layer by an etchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) etching an InP layer which shoulders a selective etching mask, has a lower surface area than the selective etching mask, and has a convex structure on a surface of the InP layer, by an etchant including hydrochloric acid and acetic acid;
- and
- (b) flattening a surface of the InP layer except an area under the selective etching mask.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on a n-type InP substrate, the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer made of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure in which the semiconductor layers are grown, and thereby a mesa stripe is formed on part including at least the second to forth semiconductor layers;
- (c) growing a fifth semiconductor layer on the InP substrate on which the mesa stripe is formed, as a lowest surface height of the fifth semiconductor layer from a surface of the substrate is higher than the fourth semiconductor layer;
- and
- (d) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
2 more elements
A method or manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on a n-type InP substrate, the second semiconductor layer having a smaller band gap energy than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure in which the semiconductor layers are grown, and thereby a mesa stripe is formed on part including at least the second to forth semiconductor layers;
- (c) growing a fifth semiconductor layer on the InP substrate on which the mesa stripe is formed, as a lowest surface height of the fifth semiconductor layer from a surface of the substrate is higher than the fourth semiconductor layer and as the mesa stripe is covered with the fifth semiconductor layer;
- and
- (d) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to third semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on a n-type InP substrate, the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, and the third semiconductor layer made of p-type InP is grown on the second semiconductor layer;
- (b) etching the semiconductor structure by using a protection pattern formed on the semiconductor structure as a mask, and thereby a mesa stripe including at least the second and third semiconductor layers is formed;
- (c) growing a forth semiconductor layer made of p-type InP on the InP substrate on which the mesa stripe is formed, as a lowest surface height of the forth semiconductor layer from a surface of the substrate is higher than an upper surface of the second semiconductor layer and lower than the third semiconductor layer;
- (d) etching a surface of the forth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (e) growing a fifth semiconductor layer made of n-type InP on the forth semiconductor layer;
- (f) removing the protection pattern used as a mask in the step of (a) by etching;
- and
- (g) growing a sixth semiconductor layer made of p-type InP on the third and fifth semiconductor layers, and growing a seventh semiconductor layer of InGaAs or InGaAsP on the sixth semiconductor layer.
5 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on an n-type InP substrate, the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure by using a protection pattern formed on the semiconductor structure as a mask, and thereby a mesa stripe including at least the second to forth semiconductor layers is formed;
- (c) removing the protection pattern by etching;
- (d) growing a fifth semiconductor layer made of p-type InP on the substrate where the mesa stripe is formed, as a lowest surface height of the fifth semiconductor layer from a surface of the substrate is higher than the second semiconductor layer and is lower than the forth semiconductor layer and as the mesa stripe is included;
- (e) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (f) growing a sixth semiconductor layer made of n-type InP on the fifth semiconductor layer, as a lowest surface height of the sixth semiconductor layer from a surface of the substrate is lower than the forth semiconductor layer;
- (g) etching a surface of the sixth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (h) growing a seventh semiconductor layer made of p-type InP, as a lowest surface height of the seventh semiconductor layer from a surface of the substrate is higher than the forth semiconductor layer;
- and
- (i) etching a surface of the seventh semiconductor layer by an etchant including hydrochloric acid and acetic acid.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on an n-type InP substrate, the second semiconductor layer having a smaller band gap energy than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure by using a protection pattern formed on the semiconductor structure as a mask, and thereby a mesa stripe including at least the second to forth semiconductor layers is formed;
- (c) removing the protection pattern by etching;
- (d) growing a fifth semiconductor layer made of p-type InP on the substrate where the mesa stripe is formed, as a lowest surface height of the fifth semiconductor layer from a surface of the substrate is higher than the second semiconductor layer and lower than the forth semiconductor layer and as the mesa stripe is included;
- (e) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (f) growing a sixth semiconductor layer made of n-type InP on the fifth semiconductor layer, and growing a seventh semiconductor layer made of p-type InP on the sixth semiconductor layer;
- (g) etching a surface of the seventh semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (h) removing the forth semiconductor layer by etching;
- and
- (i) growing an eighth semiconductor layer made of p-type InP, and growing a ninth semiconductor layer made of InGaAs or InGaAsP on the eighth semiconductor layer.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on an n-type InP substrate, the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure, and thereby a mesa stripe including at least the second to forth semiconductor layers is formed;
- (c) growing a fifth semiconductor layer on the substrate where the mesa stripe is formed, as a contact part height between the fifth semiconductor layer and the mesa stripe from a surface of the substrate is higher than the second semiconductor layer and lower than the forth semiconductor layer and as the mesa stripe is included;
- (d) growing a sixth semiconductor layer made of p-type InP on the fifth semiconductor layer;
- and
- (e) etching a surface of the sixth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
3 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on an n-type InP substrate, the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure by using a protection pattern formed on the semiconductor structure as a mask, and thereby a mesa stripe including the third and forth semiconductor layers is formed;
- (c) removing the protection pattern by etching;
- (d) growing a fifth semiconductor layer made of n-type InP on the substrate where the mesa stripe is formed, as a lowest surface height of the fifth semiconductor layer from a surface of the substrate is lower than the forth semiconductor layer;
- (e) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (f) growing a sixth semiconductor layer made of p-type InP on the fifth semiconductor layer, as a lowest surface height of the sixth semiconductor layer from a surface of the substrate is higher than the forth semiconductor layer;
- and
- (g) etching a surface of the sixth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
5 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor structure in which first to fourth semiconductor layers are grown, wherein the first semiconductor layer made of n-type InP is grown on an n-type InP substrates the second semiconductor layer having a smaller band gap than InP is grown on the first semiconductor layer, the third semiconductor layer made of p-type InP is grown on the second semiconductor layer, and the fourth semiconductor layer of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) etching the semiconductor structure, and thereby a mesa stripe including the third and forth semiconductor layers is formed;
- (c) growing a fifth semiconductor layer made of n-type InP on the substrate where the mesa stripe is formed as a highest part height of the fifth semiconductor layer from a surface of the substrate is lower than the forth semiconductor layer;
- (d) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid;
- (e) growing a sixth semiconductor layer made of p-type InP on the fifth semiconductor layer, as a lowest part height of the sixth semiconductor layer from a surface of the substrate is higher than the forth semiconductor layer;
- and
- (f) etching a surface of the sixth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
4 more elements
A method of manufacturing an optical wave guide, comprising the steps of:
- (a) forming a semiconductor structured wherein the first semiconductor layer made of InP is grown on an InP substrate, the second semiconductor layer having a larger refractive index than a refractive index of the first semiconductor layer is grown on the first semiconductor layer, and the third semiconductor layer made of InP is grown on the second semiconductor layer;
- (b) etching the semiconductor structure by using a protection pattern formed on the semiconductor structure as a mask, and thereby a mesa pattern including at least the second and third semiconductor layers is formed;
- (c) growing a forth semiconductor layer made of InP on the substrate where the mesa stripe is formed in a state where the protection pattern is shouldered by the mesa pattern;
- (d) etching a surface of the forth semiconductor layer in a state where the protection pattern is shouldered by the mesa pattern, by an etchant including hydrochloric acid and acetic acid;
- (e) removing the protection pattern;
- and
- (f) growing a fifth semiconductor layer made of InP.
4 more elements
A method of manufacturing an optical wave guide, comprising the steps of:
- (a) forming a semiconductor structure, wherein a first semiconductor layer made of InP is grown on an InP substrate, a second semiconductor layer having a larger refractive index than a refractive index of the first semiconductor layer is grown on the first semiconductor layer, a third semiconductor layer made of InP is grown on the second semiconductor layer, and a forth semiconductor layer made of InGaAs or InGaAsP is grown on the third semiconductor layer;
- (b) forming a mesa pattern including at least the second to forth semiconductor layers by etching the semiconductor structure;
- (c) growing a fifth semiconductor layer made of InP on the substrate where the mesa pattern is formed, as the mesa pattern is covered;
- and
- (d) etching a surface of the fifth semiconductor layer by an etchant including hydrochloric acid and acetic acid.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a selective growth mask on an InP substrate;
- (b) forming a semiconductor pattern by selectively growing a first semiconductor layer made of InP on an InP substrate where the selective growth mask is formed, selectively growing a second semiconductor layer having a smaller band gap than InP on the first semiconductor layer, and selectively growing a third semiconductor layer made of InP on the second semiconductor layer;
- and
- (c) etching a surface of the third semiconductor layer by etchant including hydrochloric acid and acetic acid.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a selective growth mask on an InP substrate;
- (b) forming a groove by etching uncovered area by the selective etching mask on a surface of the InP substrate;
- (c) forming a semiconductor structure by growing a first semiconductor layer made of InP on the substrate, growing a second semiconductor layer having a smaller band gap than InP on the first semiconductor layer, and growing a third semiconductor layer made of InP on the second semiconductor layer, in a state where the selective growth mask is formed on the substrate;
- (d) removing the selective growth mask;
- and
- (e) etching a surface of the third semiconductor layer by etchant including hydrochloric acid and acetic acid.
3 more elements
A method of manufacturing a multiple layer optical wave guide, comprising the steps of:
- (a) forming a first growing semiconductor structure by growing a first semiconductor layer made of InP on an InP substrate, growing a second semiconductor layer having a smaller band gap than InP on the first semiconductor layer, and growing a third semiconductor layer made of InP on the second semi-conductor layer;
- (b) forming a first mesa stripe including at least the second and third semiconductor layers by forming a first protection pattern on the first growing semiconductor structure and etching the first growing semiconductor structure with the first protection pattern as a mask;
- (c) growing a forth semiconductor layer made of InP having a high resistance on the substrate where the first mesa stripe is formed, in a state where the first protection pattern remains on the first mesa stripe;
- (d) etching a surface of the forth semiconductor layer by etchant including hydrochloric acid and acetic acid;
- (e) removing the first protection pattern;
- (f) forming a second semiconductor structure by growing a fifth semiconductor layer made of InP on the forth semiconductor layer, growing a sixth semiconductor layer having a smaller band gap than InP on the fifth semiconductor layer, and growing a seventh semiconductor layer made of InP on the sixth semiconductor layer;
- (g) forming a second mesa stripe including at least the sixth and seventh semiconductor layers by forming a second protection pattern on the second semiconductor structure and etching the second semiconductor structure with the second protection pattern as a mask;
- (h) growing an eighth semiconductor layer made of InP on the first semiconductor structure where the second mesa stripe is formed, in a state where the second protection pattern remains on the second mesa stripe;
- (i) etching a surface of the eighth semiconductor layer by etchant including hydrochloric acid and acetic acid;
- and
- (j) removing the second protection pattern by etching.
8 more elements
Dependencies are inferred from the claim text.