Crystal growth method of an oxide and multi-layered structure of oxides

A crystal growth method of an oxide comprising the steps of:

• processing a surface of a (001)-oriented silicon substrate into a dimer structure by 2×1, 1×2 surface reconstruction;
• and
• epitaxially growing a rare earth oxide of a cubic system or tetragonal system in the (110) orientation on said silicon substrate by using a source material containing at least one kind of rare earth element in an atmosphere containing an oxidic gas,
• when said rare earth oxide is epitaxially grown, said source material containing at least one kind of rare earth element being supplied after the supply of said oxidic gas onto the surface of said silicon substrate is started.

A multi-layered structure of oxides comprising:

• a (001)-oriented silicon substrate;
• a CeO2 film grown on said silicon substrate at a first growth temperature;
• and
• a (110)-oriented CeO2 film epitaxially grown on said CeO2 film at a second growth temperature higher than said first growth temperature.

A multi-layered structure of oxides comprising:

• a (001)-oriented silicon substrate;
• a SiOx film on said silicon substrate;
• a CeO2 film grown on said SiOx film at a first growth temperature;
• and
• a (110)-oriented CeO2 film epitaxially grown on said CeO2 film at a second growth temperature higher than said first growth temperature.