Method of producing semiconductor device

Abstract

A method of producing a semiconductor device able to prevent a change of shape of a contact hole and to form a contact having a low resistivity and low variability in resistivity, comprising the steps of: forming a conductive layer in a substrate; forming an insulating layer on the conductive layer; forming an opening used as the contact hole in the insulating layer to penetrate and reach the conductive layer; and removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching and using an etching gas containing a fluorine compound gas at a predetermined concentration in a predetermined pressure wherein the concentration and pressure are determined within a range able to control an etching amount of the native oxide.

Dependencies are inferred from the claim text.