Multi-layer dielectric and method of forming same

A method of forming a dielectric layer during the manufacture of a semiconductor device, comprising:

• providing a substrate;
• forming an opening relative to the substrate, the opening having an aspect ratio greater than about two;
• forming a first dielectric layer in the opening wherein a portion of the opening not filled with said first dielectric layer has an aspect ratio of not greater than about two;
• and
• forming a second dielectric layer over the first dielectric layer, the second layer having a top surface that is not within the opening.

A method of forming a dielectric layer in an opening, comprising:

• forming a first dielectric layer in the opening, said forming the first layer including:
• providing a shower head at a first distance from the substrate, and
• providing through the shower head constituents forming the first layer;
• and
• forming a second dielectric layer over the first dielectric layer, the second layer having a top surface that is not within the opening, said forming the second layer including:
• providing the shower head at a second distance from the substrate, the second distance lower than the first distance, and
• providing through the shower head constituents forming the second layer.

An assembly, comprising:

• a substrate;
• an opening relative to said substrate, said opening having an aspect ratio greater than about two;
• a first dielectric layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two;
• and
• a second dielectric layer over said first dielectric layer, said second layer having a top surface that is not within said opening.

An assembly, comprising:

• a plurality of structures forming an opening, said opening having an aspect ratio greater than about two;
• a first dielectric layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two;
• and
• a second dielectric layer over said first dielectric layer, said second layer having a top surface that is not within said opening.

An assembly, comprising:

• a plurality of conductors forming an opening, said opening having an aspect ratio greater than about two;
• a first dielectric layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two ;
• and
• a second dielectric layer over said first dielectric layer, said second layer having a top surface that is not within said opening.

An assembly, comprising:

• a substrate;
• an opening relative to said substrate, said opening having an, aspect ratio greater than about two;
• a first ozone-TEOS layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two;
• and
• a second ozone-TEOS layer over said first layer, said second layer having a top surface that is not within said opening.

An assembly, comprising:

• a plurality of structures forming an opening, said opening having an aspect ratio greater than about two;
• a first ozone-TEOS layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two;
• and
• a second ozone-TEOS layer over said first layer, said second layer having a top surface that is not within said opening.

A system, comprising:

• a first device including a substrate, an opening relative to said substrate, said opening having an aspect ratio greater than about two, a first dielectric layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two, a second dielectric layer over said first dielectric layer, said second layer having a top surface that is not within said opening;
• a second device;
• and
• a bus connected to both said first device and said second device.

A system, comprising:

• a first device including a plurality of structures forming an opening, said opening having an aspect ratio greater than about two, a first dielectric layer in said opening wherein a portion of said opening not filled with said first dielectric layer has an aspect ratio of not greater than about two, and a second dielectric layer over said first dielectric layer, said second layer having a top surface that is not within said opening;
• a second device;
• and
• a bus connected to both said first device and said second device.