Anti-reflection structure for a conductive layer in a semiconductor device
AssigneeNEC Corporation
InventorHaruo Iwasaki
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Abstract
An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
Claims5
A method for manufacturing a semiconductor device comprising the steps of forming a conductive layer overlying a substrate, consecutively forming a first anti-reflection layer, a first insulator layer and a second anti-reflection layer on said conductive layer, forming a mask pattern on said second anti-reflection layer by using a photolithographic technique, and patterning said second anti-reflection layer, said first insulator layer, said first anti-reflection layer and said conductive layer by using said mask pattern.
Dependencies are inferred from the claim text.