Method of forming a semiconductor device

A method of forming an integrated circuit, comprising:

• forming a device on a semiconductor substrate, including:
• depositing an epitaxial layer over a first source/drain region;
• implanting a layer within the epitaxial layer, the thickness of the layer substantially defining a channel length of the device;
• replacing the layer with a gate layer;
• depositing dielectric layers over the device;
• and
• forming interconnections in the dielectric layers to interconnect the device to form an operative integrated circuit.

A method of manufacturing a device on a semiconductor substrate, comprising:

• depositing an epitaxial layer over a first source/drain region;
• implanting a layer within the epitaxial layer to create first and second epitaxial layers, the thickness of the layer substantially defining a channel length of the device;
• forming a trench through the epitaxial layer;
• epitaxially filling the trench with silicon to create a source/drain channel;
• forming lightly doped drain regions on opposing sides of the source/drain channel;
• replacing the layer with a gate layer;
• forming gate oxides between the lightly doped drain regions
• replacing the first and second epitaxial layers with first and second oxide layers;
• and
• depositing a second source/drain region over the source/drain channel to thereby connect the first and second source/drain regions with the source/drain channel.