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US 2002/0119635 A1Published application
Integrated resistor having aligned body and contact and method for forming the same
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorsJonathan Maimon, Murty S. Polavarapu
Life of this patent
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Abstract
An integrated resistor includes a resistor body region and a resistor contact region that is aligned with the body region. Because the resistor includes an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value. A method for forming such a resistor is also disclosed.
Claims30
A semiconductor structure, comprising;
- a layer of semiconductor material having a first edge;
- a first region disposed in the layer, contiguous with the first edge, and having a first conductivity;
- and
- a second region disposed in the layer, contiguous with the first edge and with the first region, and having a second conductivity that is different than the first conductivity.
1 more element
An integrated resistor, comprising:
- a body region having a resistance and having a first edge;
- and
- a first contact region having a resistance that is lower than a resistance of the body region and having an edge that is substantially aligned with the first edge of the body region.
An integrated circuit, comprising:
- a semiconductor layer having first and second sides;
- and
- a resistor including,
- a first contact region disposed in the semiconductor layer, contiguous with the first side of the semiconductor layer, and having a first resistivity,
- a body region disposed in the semiconductor layer, contiguous with the first and second sides of the semiconductor layer and with the first contact region, and having a second resistivity that is higher than the first resistivity, and
- a second contact region disposed in the semiconductor layer, contiguous with the second side of the semiconductor layer and with the body region, separated from the first contact region, and having substantially the first resistivity.
3 more elements
A memory circuit, comprising:
- first and second supply terminals;
- semiconductor layers including a resistive layer having a first portion with first and second edges;
- a first bit line disposed in one of the semiconductor layers;
- and a memory cell including,
- a first transistor disposed in one of the semiconductor layers and having a first terminal coupled to the first supply terminal, a second terminal coupled to the second supply terminal, and a control terminal,
- a second transistor disposed in one of the semiconductor layers and having a first terminal coupled to the first supply terminal, a second terminal coupled to the second supply terminal, and a control terminal coupled to the first bit line, and
- a first resistor including,
- a first contact region disposed in the first portion of the resistive layer, contiguous with the first edge of the first portion, having a first resistivity, and coupled to the control terminal of the first transistor,
- a body region disposed in the first portion of the resistive layer, contiguous with the first and second edges of the first portion and with the first contact region, and having a second resistivity that is higher than the first resistivity, and
- a second contact region disposed in the first portion of the resistive layer, contiguous with the second edge of the first portion and with the body region, separated from the first contact region, and having substantially the first resistivity.
7 more elements
An electronic system, comprising:
- a data input device;
- a data output device;
- and
- a computer circuit coupled to the data input and output devices and including a processor and an integrated circuit coupled to the processor, the integrated circuit comprising,
- a semiconductor layer having first and second sides, and
- a resistor that includes,
- a first contact region disposed in the semiconductor layer, contiguous with the first side of the semiconductor layer, and having a first resistivity,
- a body region disposed in the semiconductor layer, contiguous with the first and second sides of the semiconductor layer and with the first contact region, and having a second resistivity that is higher than the first resistivity, and
- a second contact region disposed in the semiconductor layer, contiguous with the second side of the semiconductor layer and with the body region, separated from the first contact region, and having substantially the first resistivity.
6 more elements
A method, comprising:
- forming a first mask on a semiconductor layer;
- doping exposed portions of the masked semiconductor layer;
- forming a second mask on the first mask and on the semiconductor layer;
- and
- removing exposed portions of the first mask and the semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.