Dual salicidation process
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
Life of this patent
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Abstract
A dual salicidation process has the steps of: covering a sacrificial layer on the top of a polysilicon gate conductor; performing a thermal oxidization process to form a poly-oxide spacer on the sidewall of the polysilicon gate conductor; forming source/drain regions within the substrate at the outer lateral surfaces of the poly-oxide spacer; removing the sacrificial layer; performing a first salicidation process to convert the polysilicon gate conductor to a silicide gate conductor; performing a second salicidation process to form silicide structures upon the source/drain regions.
Claims13
A dual salicidation process, comprising the steps of:
- (a) providing a semiconductor substrate which comprises a gate dielectric, a polysilicon gate conductor patterned upon a predetermined area of the gate dielectric, a sacrificial layer patterned upon the polysilicon gate conductor, and LDD areas formed within the substrate at opposed sidewall of the polysilicon gate conductor;
- (b) performing a thermal oxidization process to form a poly-oxide spacer on the sidewall of the polysilicon gate conductor;
- (c) performing an implantation process to form source/drain regions within the substrate at the outer lateral surfaces of the poly-oxide spacer;
- (d) removing the sacrificial layer;
- (e) depositing a first layer of refractory metal across exposed surfaces of the gate dielectric, the poly-oxide spacer, and the polysilicon gate conductor;
- (f) heating the first layer of refractory metal to convert the polysilicon gate conductor to a silicide gate conductor,
- (g) removing the first layer of refractory metal which is not reacted;
- (h) removing the gate dielectric from the source/drain regions;
- (i) depositing a second layer of refractory metal across the source/drain regions, the poly-oxide spacer, and the silicide gate conductor;
- (j) heating the second layer of refractory metal to form silicide structures upon the source/drain regions;
- and
- (k) removing the second layer of refractory metal which is not reacted.
Dependencies are inferred from the claim text.