US 2002/0119618 A1 · Method for forming contacts of memory devices using an etch stop layer

Abstract

A method for forming a plurality of contact openings on a semiconductor substrate using an etch stop layer is disclosed herein. A semiconductor substrate is provided having a plurality of memory devices and a plurality of isolation regions formed thereon. A silicon oxide layer is formed on the plurality of semiconductor devices, the plurality of isolation regions, and the semiconductor substrate. An etch stop layer is formed on the silicon oxide layer followed by depositing a thick interlevel dielectric layer. A photoresist layer is pattern on the interlevel dielectric layer to define contact regions. A first dry etching process is performed to create a plurality of contact openings with different dimension in the interlevel dielectric layer until exposing portions of the etch stop layer. A second dry etching process is performed to create the plurality of contact openings through the etch stop layer. A third dry etching process is then performed to create the plurality of contact openings through the silicon oxide layer, exposing portions of the active regions of the plurality of memory devices. The pattern photoresist layer is then removed.

Claims32

Dependent claims

A method for forming contacts of semiconductor devices, said method comprising the steps of:

providing a semiconductor substrate having a plurality of device structures and a plurality of isolation regions formed thereon;
forming an isolation dielectric layer on said plurality of device structures, said plurality of isolation regions, and said semiconductor substrate;
forming an etch stop layer on said isolation dielectric layer;
forming an interlevel dielectric layer on said etch stop layer;
forming a photoresist pattern on said interlevel dielectric layer to define a plurality of contact regions;
performing a first etching process to create a plurality of contact openings with different dimension sizes in said interlevel dielectric layer until exposing portions of said etch stop layer;
performing a second etching process to create said plurality of contact openings with different dimension sizes through said etch stop layer until exposing portions of said isolation dielectric layer;
performing a third etching process to create said plurality of contact openings with different dimension sizes through said isolation dielectric layer, exposing portions of active region of said plurality of device structures;
removing said photoresist pattern layer;
and
filling a conductive material in said plurality of contact openings to form a plurality of contacts for electrically connecting.

8 more elements

Dependencies are inferred from the claim text.

Method for forming contacts of memory devices using an etch stop layer

Life of this patent

Method for forming contacts of memory devices using an etch stop layer

Life of this patent

Abstract

Claims32