Back to results
US 2002/0119612 A1Published application
Manufacturing method of semiconductor device using mask pattern having high etching resistance
AssigneeKabushiki Kaisha Toshiba
InventorsJunko Ohuchi, Yasuhiko Sato, Eishi Shiobara, Hisataka Hayashi, Tokuhisa Ohiwa, Yasunobu Onishi
Life of this patent
Estimating the term…
Abstract
A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.
Claims23
A manufacturing method of semiconductor device comprising:
- forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object;
- forming a mask material pattern by etching said mask material to a desired pattern;
- and
- etching said object to transfer said mask material pattern as a mask to said object.
1 more element
A manufacturing method of semiconductor device comprising:
- forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object;
- forming a photo resist film on said mask material;
- forming a resist pattern by fabricating said photo resist film into a desired pattern;
- forming a mask material pattern by transferring said resist pattern to said mask material;
- and
- etching said object to transfer said mask material pattern as a mask to said object.
3 more elements
A manufacturing method of semiconductor device comprising:
- forming a first wiring layer above a semiconductor substrate with a first insulating film therebetween;
- forming a second insulating film on said first wiring layer and said first insulating film;
- forming a first organic base film having an aromatic ring and carbon content of 80 wt % or more on said second insulating film;
- forming a first inorganic film pattern containing a first inorganic component having at least any one of semiconductor element and metal element on said first organic base film;
- forming a first organic film pattern of said first organic base film by transferring said first inorganic film pattern as a mask to said first organic base film;
- forming any one of a hole and a groove in said second insulating film by transferring said first organic film pattern as a mask to said second insulating film;
- forming a second organic base film having an aromatic ring and carbon content of 80 wt % or more on said first organic film pattern;
- forming a second inorganic film pattern containing a second inorganic component having at least any one of semiconductor element and metal element on said second organic base film;
- forming a second organic film pattern of said second organic base film by transferring said second inorganic film pattern as a mask to said second organic base film;
- forming any one of a groove and a hole in said second insulating film by transferring said second organic film pattern as a mask to said second insulating film;
- and
- forming a second wiring layer keeping contact with said first wiring layer by embedding a conductive material in said groove and said hole.
9 more elements
Dependencies are inferred from the claim text.