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US 2002/0119610 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKatsunori Nishii, Kaoru Inoue, Toshinobu Matsuno, Yoshito Ikeda, Hiroyuki Masato
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Abstract
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
Claims28
A semiconductor device comprising:
- a first nitride semiconductor layer formed over a substrate;
- an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer;
- and
- a gate electrode formed on the insulating oxidation layer.
1 more element
A method for fabricating a semiconductor device, the method comprising:
- a first step of forming a first nitride semiconductor layer over a substrate;
- a second step of forming a second nitride semiconductor layer on the first nitride semiconductor layer and oxidizing the formed second nitride semiconductor layer to form an insulating oxidation layer composed of the second nitride semiconductor layer;
- a third step of forming a gate electrode on the insulating oxidation layer;
- and
- a fourth step of performing selective etching with respect to regions of the insulating oxidation layer which are located on both sides of the gate electrode to form openings in the insulating oxidation layer and forming source and drain electrodes in the formed openings.
2 more elements
A method for fabricating a semiconductor device, the method comprising:
- a first step of forming a first nitride semiconductor layer over a substrate;
- a second step of forming a second nitride semiconductor layer on the first nitride semiconductor layer;
- a third step of forming an anti-oxidation protective film on regions of the second nitride semiconductor layer to be formed with ohmic electrodes;
- a fourth step of oxidizing the second nitride semiconductor layer by using the anti-oxidation protective film as a mask to form an insulating oxidation layer in the second nitride semiconductor layer except for the ohmic-electrode formation regions;
- a fifth step of removing the anti-oxidation protective film and forming the ohmic electrodes on the ohmic-electrode formation regions of the second nitride semiconductor layer;
- and
- selectively forming a gate electrode on the insulating oxidation layer.
4 more elements
Dependencies are inferred from the claim text.