Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device
AssigneeSeiko Epson Corporation
InventorsMitsutoshi Miyasaka, Takao Sakamoto
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Abstract
The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.
Claims24
A method for forming a silicon oxide film, comprising:
- forming a silicon oxide film on the base member;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein a thickness of the silicon oxide is t (cm) and an absorption coefficient of the infrared light by the silicon oxide film is k (cm1), and
- wherein the film thickness t and the absorption coefficient k satisfy:
- t×k>0.01.
A method for manufacturing a semiconductor device, comprising:
- providing a base member including a silicon;
- oxidizing the silicon to form a silicon oxide;
- irradiating infrared light onto the silicon oxide,
- wherein a thickness of the silicon oxide is t (cm) and an absorption coefficient of the infrared light by the silicon oxide film is k (cm1), and
- wherein the film thickness t and the absorption coefficient k satisfy:
- t×k>0.01.
A method for manufacturing a semiconductor device of claim 16, further comprising:
- providing a glass substrate;
- and
- depositing the silicon on a surface of the glass substrate to form the gas member,
- wherein the film thickness t and the absorption coefficient k satisfy:
- t×k>0.1.
An apparatus for irradiating an infrared light, comprising:
- an infrared light generating mechanism that generates infrared light;
- a scanning mechanism that varies a relative positional relation between the substrate and the leveled infrared light,
- wherein the mechanisms are composed so as to be able to irradiate the infrared light towards a silicon oxide film, and
- wherein the infrared light generating mechanism is capable of generating the infrared light having a wavelength between 8.9 μm and 10.0 μm.
A method for manufacturing a silicon oxide film comprising:
- forming a silicon oxide film on a substrate;
- and
- irradiating light onto the silicon oxide film;
- the step of irradiating light is carried out under the condition where:
- τ>exp(−0.04605·Tox+34.539)
- where a silicon oxide film temperature at 800° C. or above due to temperature rise in the step of irradiating light is Tox(° C.) and total time at the temperature (Tox) is τ(s).
A method for manufacturing a silicon oxide film comprising:
- forming a silicon oxide film on a semiconductor material;
- and
- irradiating light on the silicon oxide film,
- the step of irradiating light being carried out under the condition where:
- τ>2·(1+ν)·η0·exp(ε/k·(Tox+273.15))/E
- where ν is Poisson's ratio of an oxide film;
- E is the Young's modulus thereof;
- η is the viscosity thereof, η0 is the pre-exponential factor of viscosity;
- ε is activation energy of viscosity;
- and k is Boltzmann's constant, respectively, and where a silicon oxide film temperature at 1,000° C. or above due to temperature rise in the step of irradiating light is Tox (° C.) and total time at the temperature (Tox) is τ (s).
Dependencies are inferred from the claim text.