Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideto Ohnuma, Tamae Takano, Toru Mitsuki
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Abstract
The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.
Claims26
A method for manufacturing a semiconductor device comprising the steps of:
- performing a heating process on a first semiconductor film to form a second semiconductor film;
- irradiating laser light to the second semiconductor film to forma third semiconductor film having a plurality of convexes;
- and
- irradiating intense light to the third semiconductor film to form a fourth semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- irradiating intense light to a first semiconductor film to form a second semiconductor film;
- irradiating laser light to the second semiconductor film to form a third semiconductor film having a plurality of convexes;
- and
- irradiating intense light to the third semiconductor film to form a fourth semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- providing a first semiconductor film with a metal element for promoting crystallization;
- performing a heating process on a first semiconductor film to form a second semiconductor film;
- irradiating laser light to the second semiconductor film to form a third semiconductor film having a plurality of convexes;
- and
- irradiating intense light to the third semiconductor film to form a fourth semiconductor film.
A method for manufacturing a semiconductor device comprising the steps of:
- providing a first semiconductor film with a metal for promoting crystallization;
- irradiating intense light to the first semiconductor film to form a second semiconductor film;
- irradiating laser light to the second semiconductor film to form a third semiconductor film having a plurality of convexes;
- and
- irradiating intense light to the third semiconductor film to form a fourth semiconductor film.
Dependencies are inferred from the claim text.