Method to increase the emission current in FED displays through the surface modification of the emitters
AssigneeMicron Technology, Inc.
InventorKanwal K. Raina
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Abstract
A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.
Claims23
A method of treating at least one flat panel display current emitter, said method comprising:
- a) exposing at least a portion of said at least one current emitter to a hydrogenation process;
- and
- b) exposing at least a portion of said at least one current emitter to a nitrogen infusion process.
A method of fabricating a field emission device, said method comprising:
- treating the tips of the current emitters of said field emission device with plasma enhanced chemical vapor deposition hydrogenation in a chamber;
- and
- treating said tips with nitrogen plasma while said tips are still in said chamber.
A field emission display device comprising:
- at least one current emitter formed of a doped silicon;
- a substrate having a phosphor coating therein, in or at least one region positioned to receive elections emitted by said current emitter;
- and
- said current emitter having a current emission surface which has been treated with a plasma enhanced chemical vapor deposition hydrogenation process followed by a nitrogen infusion process, which reduces the concentration of oxygen at said current emission surface.
Dependencies are inferred from the claim text.