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US 2002/0118713 A1Published application
Module for optical communications
AssigneeHitachi, Ltd.
InventorsMasataka Shirai, Junichiro Shimizu, Shinji Tsuji
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AssigneeHitachi, Ltd.
InventorsMasataka Shirai, Junichiro Shimizu, Shinji Tsuji
Estimating the term…
A module for optical communication intended for decreasing the consumption power of a modulator integrated laser, in which a, multiple-quantum well constituting a laser active layer region comprises InGaAlAs/InGaNAs to keep the reliability and optical power level even when a chip is kept at a high temperature, and the difference of wavelength between the oscillation wavelength and the band gap wavelength of the modulator and the laser should be made greater in proportion with the elevation of the chip setting temperature for maintaining the transmission performance, by which the temperature difference between the module case temperature and the chip setting temperature is reduced to decrease the module consumption power.
A module for optical communication having a semiconductor laser active region, an optical modulation region for modulating the light from the semiconductor laser active region and a temperature control region for the temperature control of at least the optical modulation region in which the semiconductor laser active region has a multiple-quantum well structure having at least two quaternary mixed crystal layers selected from the group consisting of quaternary mixed compounds of In, Ga, Al and As and a quaternary mixed compounds of In, Ga, N and As, and at least the temperature of the semiconductor laser active region or the temperature of a component in thermally contact with the semiconductor laser active region for holding the semiconductor layer active region can be set to 35° C. or higher during operation of the semiconductor laser active region and the optical modulation region.
A module for optical communication having a semiconductor laser active region having at least two active regions, an optical modulation region for modulating the light from the semiconductor laser active regions and a temperature control component for temperature control of at least the optical modulation region, and a control component for controlling the wavelength of the light emitted from the semiconductor laser active region in which the semiconductor laser active region has a multiple-quantum well structure having at least two quaternary mixed compounds layers selected from the group consisting of quaternary mixed compounds of In, Ga, Al and As and a quaternary mixed crystals of In, Ga, N and As, and the temperature of at least the semiconductor laser active region or the temperature of the component in thermally contact with the semiconductor laser active region for holding the semiconductor layer active region can be set to 35° C. or higher during operation of the semiconductor laser active region and the optical modulation region.
A module for optical communication having a semiconductor laser active region, a plurality of optical modulation regions for modulating the light from the semiconductor laser active region, a multiplexer for multiplexing the outputted light and a temperature control component for temperature control of at least the optical modulation region, in which the semiconductor laser active region has a multiple-quantum well structure having at least two quaternary mixed crystal layers selected from the group consisting of quaternary mixed compounds of In, Ga, Al and As and a quaternary mixed compounds of In, Ga, N and As, and the temperature of at least the semiconductor laser active region or the temperature of the component in thermally contact with the semiconductor laser active region for holding the semiconductor layer active region can be set to 35° C. or higher during operation of the semiconductor laser active region and the optical modulation region.
Dependencies are inferred from the claim text.