Method for storing data in a nonvolatile memory
AssigneeSTMicroelectronics S.r.l.
InventorsMarco Pasotti, Guido De Sandre, Giovanni Guaitini, David Iezzi, Marco Poles, PierLuigi Rolandi
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Abstract
Described herein is a method for storing a datum in a first and a second memory cells of a nonvolatile memory. The storage method envisages programming the first and second memory cells in a differential way, by setting a first threshold voltage in the first memory cell and a second threshold voltage different from the first threshold voltage in the second memory cell, the difference between the threshold voltages of the two memory cells representing a datum stored in the memory cells themselves.
Claims30
A method for storing data in a nonvolatile memory having first and second memory cells, comprising:
- programming said first and second memory cells in a differential way.
A nonvolatile memory having at least a first and a second memory cells, and storage means for storing data in said first and second memory cells, comprising programming means for programming said first and second memory cells in a differential way.
A method, comprising:
- addressing first and second memory cells associated with a single datum;
- comparing a threshold voltage of the first memory cell to a threshold voltage of the second memory cell;
- and
- wherein a difference between the threshold voltages of the first and second memory cells represents a datum stored in the first and second memory cells.
A method comprising:
- addressing first and second memory cells for storage of a datum;
- and
- charging the first and second memory cells differentially as a way of storing the datum.
A memory device comprising:
- first and second memory cells;
- a programming circuit configured to increase a threshold voltage of the first and second memory cells;
- and
- a comparator circuit configured to compare the threshold voltages of the first and second memory cells, and to output a datum based upon the difference of the threshold voltages of the first and second memory cells.
Dependencies are inferred from the claim text.