Method of reading two-bit memories of NROM cell
AssigneeMacronix International Co., Ltd.
InventorsFuh-Cheng Jong, Kent Kuohua Chang
Life of this patent
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Abstract
A method of reading two-bit information in Nitride Read only memory (NROM) cell simultaneously. According to outputted voltage in drain or source of the NROM, it can identify a logical two-bit combination massage of the NROM. The method includes: grounding the source of the NROM; inputting a voltage to the drain of the NROM; inputting a voltage to the gate of the NROM; measuring the outputted current of drain or source; and dividing the outputted current into four different zones, and each zone represents a specific logical two-bit information, which is “0 and 0”, “0 and 1”, “1 and 0”, or “1 and 1”.
Claims30
A method of reading two bits logical information simultaneously in Nitride Read Only Memory (NROM) cell, said method comprising the steps of:
- grounding a first electrode of said NROM to make the voltage of the first electrode to 0;
- inputing a first voltage to a second electrode of said NROM;
- inputing a second voltage to the gate of said NROM;
- measuring the output current of said first electrode of NROM;
- and
- analyzing said output current to divide into four different zones by the quantity of said output current, each of said four different zones represents a specific signal combination of said two bit logical information of said NROM cell.
A method of reading two bits logical information simultaneously in Nitride Read Only Memory (NROM) cell, said method comprising the steps of:
- grounding a first electrode of said NROM to make the voltage of the first electrode to 0;
- inputing a first voltage to a second electrode of said NROM;
- inputing a second voltage to the gate of said NROM;
- measuring the output current of said second electrode of NROM;
- and
- analyzing said output current to divide into four different zones by the quantity of said output current, each of said four different zones represents a specific signal combination of said two bit logical information of said NROM cell.
A method of reading two bits logical information simultaneously in Nitride Read Only Memory (NROM) cell, said method comprising the steps of:
- grounding a first electrode of said NROM to make the voltage of the first electrode to 0;
- inputing a first voltage to a second electrode of said NROM;
- inputing a second voltage to the gate of said NROM;
- measuring the output current of said first electrode of NROM;
- and
- analyzing said output current by a sense amplifier to divide into four different zones by the quantity of said output current, each of said four different zones represents a specific signal combination of said two bit logical information, which is “0” and “0”, “0” and “1”, “0” and “1”, or “1” and “1”.
A method of reading two bits logical information simultaneously in Nitride Read Only Memory (NROM) cell, said method comprising the steps of:
- grounding a first electrode of said NROM to make the voltage of the first electrode to 0;
- inputing a first voltage to a second electrode of said NROM;
- inputing a second voltage to the gate of said NROM;
- measuring the output current of said second electrode of NROM;
- and
- analyzing said output current by a sense amplifier to divide into four different zones by the quantity of said output current, each of said four different zones represents a specific signal combination of said two bit logical information, which is “0”, “0” and “1”, “0” and “1”, or “1” and “1”.
Dependencies are inferred from the claim text.