Ink jet head having improved pressure chamber and its manufacturing method
AssigneeNEC Corporation
InventorsKenichi Ohno, Kenichiro Suzuki, Yuji Akimoto, Torahiko Kanda, Yasuhiro Otsuka
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Abstract
In an ink jet head including a substrate having a opening for a pressure chamber, a section of the opening is gradually increased from a front surface of the substrate to an intermediate level of the substrate and is gradually decreased from the intermediate level of the substrate to a back surface of the substrate. The opening at the front surface of the substrate serves as a nozzle.
Claims24
An ink jet head comprising a substrate having a first opening for a pressure chamber, wherein a section of said first opening being gradually increased from a front surface of said substrate to an intermediate level of said substrate and gradually decreased from the intermediate level of said substrate to a back surface of said substrate,
- said first opening at the front surface of said substrate serving as a nozzle.
A method for manufacturing an ink jet head, comprising the steps of:
- forming an impurity diffusion layer on at least one of front and back surfaces of a silicon substrate;
- forming an etching mask layer having an opening for a nozzle on a front surface of said silicon substrate;
- performing an anistropic dry etching process upon said silicon substrate using said etching mask layer as a mask and said impurity diffusion layer as an etching stopper;
- and
- performing an anisotropic wet etching process upon said silicon substrate to form a pressure chamber therein, after said anistropic dry etching process is performed.
A method for manufacturing an ink jet head, comprising the steps of:
- forming a first etching mask layer having a first opening for a nozzle on a front surface of a silicon substrate;
- forming a second etching mask layer having a second opening in correspondence with said first opening on a back surface of said silicon substrate;
- performing an anistropic dry etching process upon said silicon substrate using said first and second etching mask layer as masks;
- and
- performing an anisotropic wet etching process upon said silicon substrate to form a pressure chamber therein, after said anistropic dry etching process is performed.
Dependencies are inferred from the claim text.