High Power Pin Diode Switch
AssigneeRaytheon Company
InventorsThomas M Sharpe, Donald A. Charlton, Richard W. Burns
Life of this patent
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Abstract
A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.
Claims20
A switch comprising:
- a first circuit means that includes a first blocking capacitor having a first side coupled to a first node and having a second side connected to an input;
- a resonating stub coupled between the first node and an open circuit connection;
- an inductive resonator having a first end connected to the open circuit resonating stub and a second end;
- a PIN diode coupled between the second end of the inductive resonator and ground;
- a second blocking capacitor having a first side coupled to the first node and a second side;
- an RF isolation means having a first end coupled to the first side of the second blocking capacitor and a second end coupled to a bias connection;
- a second circuit means coupled between the second side of the second blocking capacitor of the first circuit means and an output;
- and
- a bias controller coupled to both the first and second circuit means to create opposite and reversible bias states therebetween.
Dependencies are inferred from the claim text.