US 2002/0118066 A1 · Variable phase-shifting rf power amplifiers

Abstract

Variable phase-shifting rf power amplifiers (10, 30, 50) shift rf outputs at any angle up to 90, 180, or 270 degrees, respectively, while maintaining an rf output substantially constant. The variable phase-shifting rf power amplifiers (10, 30, 50) include two to four field-effect transistors (Q1, Q2, Q3, Q4) that are interposed between phase splitters and combiners, and that are connected in series between a source voltage and a lower voltage. Phase shifting is achieved by selectively and variably controlling amplification of the field-effect transistors (Q1, Q2, Q3, Q4). Selective and variable control of amplification is achieved by separately and variably controlling gate voltages of the field-effect transistors (Q1, Q2, Q3, Q4), whereby a difference between the source voltage and the lower voltage is used selectively by one of the field-effect transistors (Q1, Q2, Q3, Q4) and selectively proportioned between two of the field-effect transistors (Q1, Q2, Q3, Q4). Phase controls (34, 54) generate separate and variable phase-shifting voltages, or gate voltages, in response to a variable phase-shifting voltage.

Claims10

Dependent claims

A method for phase-shifting an rf output which comprises:

a) splitting an rf input into first and second rf signals that are at different phase angles;
b) inputting said first rf signal into a first solid-state amplifying device;
c) inputting said second rf signal into a second solid-state amplifying device;
d) amplifying a selected one of said rf signals;
and
e) combining said rf signals subsequent to said amplifying step.

3 more elements

Dependencies are inferred from the claim text.

Variable phase-shifting rf power amplifiers

Life of this patent

Variable phase-shifting rf power amplifiers

Life of this patent

Abstract

Claims10