Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japanese corporation
InventorsShunpei Yamazaki, Hisashi Ohtani
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Abstract
A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.
Claims20
A phase comparator comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A low pass filter comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A voltage controlled oscillator comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A frequency divider comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
An oscillator for a source line driver comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
An oscillator for a gate line driver comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A digital-to-analog converter comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A pixel matrix circuit comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A source line driver circuit comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
A gate line driver circuit comprising:
- a semiconductor film provided over a silicon wafer and comprising a source region, a drain region and a channel formation region provided between said source region and said drain region;
- and
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween,
- wherein lattices are continuously connected to each other at grain boundary of said semiconductor film according to high resolution TEM.
Dependencies are inferred from the claim text.