US 2002/0117723 A1 · Semiconductor integrated circuit device and manufacture method therefore

Abstract

A submicron CMOS transistor is mounted on the same substrate together with an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor, without degrading the characteristics of these components. When a punch-through stopper area is formed on a main surface side of a semiconductor substrate, an area in which an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor is formed is masked, and for example, an ion injection is then carried out. Thus, a punch-through stopper area is formed in the area in which a submicron CMOS transistor is formed, while preventing the formation of a punch-through stopper area in the area in which an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor is formed.

Claims10

Dependent claims

A semiconductor integrated circuit device comprising:

a semiconductor substrate;
a first MOS transistor and a second MOS transistor integrated in the semiconductor substrate, wherein said second MOS transistor has a lower threshold voltage than said first MOS transistor and said first MOS transistor has a smaller channel length than said second MOS transistor;
and
a punch-through stopper area that surrounds a source area and a drain area of said first MOS transistor and provides a punch-through voltage resistance between said source area and said drain area.

1 more element

Dependencies are inferred from the claim text.

Semiconductor integrated circuit device and manufacture method therefore

Life of this patent

Semiconductor integrated circuit device and manufacture method therefore

Life of this patent

Abstract

Claims10