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US 2002/0117703 A1Published application
Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed
AssigneeInternational Business Machines Corporation
InventorsJeffrey P. Gambino, Stephen E. Luce, Thomas L. McDevitt, Henry W. Trombley
Life of this patent
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Abstract
The present invention provides a method of forming a capacitor in a last metal wiring layer, and the structure so formed. The invention further provides a spacer formed around the capacitor to electrically isolate portions of the capacitor.
Claims29
A capacitor for a semiconductor device, comprising:
- a first and a second conductive element formed within a first insulative layer;
- a first conductive plate formed over the first conductive element;
- a second insulative layer formed over the first conductive plate;
- a second conductive plate formed over the second insulative layer;
- and a conductive layer electrically connecting the second conductive plate and the second conductive element.
2 more elements
A semiconductor device, comprising:
- a first and a second conductive element formed within a first insulative layer;
- a capacitor formed over the first conductive element;
- a spacer formed around the capacitor;
- and a conductive layer electrically connecting the capacitor and the second conductive element.
1 more element
A method of forming a capacitor for a semiconductor device, comprising:
- forming at least a first and a second conductive element within an insulative layer;
- forming a capacitor over the first conductive element;
- forming a spacer around the capacitor;
- and forming a conductive layer electrically connecting the capacitor to the second conductive element.
1 more element
Dependencies are inferred from the claim text.