US 2002/0117682 A1 · Amorphous semiconductor open base phototransistor array

Abstract

An array of light-sensitive sensors utilizes bipolar phototransistors that are formed of multiple amorphous semiconductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes that are generated by reception of incoming photons to a particular open base phototransistor provide current injection to the base region of the phototransistor. The collector region is preferably an intrinsic amorphous silicon layer. The phototransistors may be operated in either an integrating mode in which bipolar current is integrated or a static mode in which a light-responsive voltage is monitored.

Claims20

Dependent claims

An imaging arrangement comprising:

a substrate;
and
an array of amorphous semiconductor bipolar phototransistors on said substrate, each said bipolar phototransistor including a plurality of amorphous semiconductor layers, said plurality of amorphous semiconductor layers including at least one p-type layer and at least one n-type layer, each said bipolar phototransistor having an output that is responsive to light received at said phototransistor.

Dependencies are inferred from the claim text.

Amorphous semiconductor open base phototransistor array

Life of this patent

Amorphous semiconductor open base phototransistor array

Life of this patent

Abstract

Claims20