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AssigneeNitronex Corporation
InventorsT. Warren Weeks, Edwin L. Piner, Ricardo M. Borges, Kevin J. Linthicum
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The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material formed over a substrate, such as silicon. The device also may include one or more non-conducting layers between the substrate and the gallium nitride material which can aid in the deposition of the gallium nitride material. A via is provided which extends from the backside of the device through the non-conducting layer(s) to enable electrical conduction between an electrical contact deposited within the via and, for example, an electrical contact on the topside of the device. Thus, devices of the invention may be vertically conducting. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs (e.g., HFETs), Gunn-effect diodes, and varactor diodes, among others.
A semiconductor structure comprising:
A semiconductor structure comprising:
A vertically conducting semiconductor device comprising:
A semiconductor structure comprising:
A method of forming a semiconductor structure comprising
The method of claim 46, further comprising forming an electrical contact on a topside of the device, and the semiconductor structure being capable of vertical conduction between the topside electrical contact and the backside electrical contact.
A method of forming a semiconductor structure comprising
Dependencies are inferred from the claim text.