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US 2002/0117674 A1Published application
Semiconductor light emitting device
AssigneeKabushiki Kasiha Toshiba
InventorHideto Sugawara
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AssigneeKabushiki Kasiha Toshiba
InventorHideto Sugawara
Estimating the term…
The semiconductor light emitting device has the first semiconductor light emission element 13 for emitting color light in the first wave length range, the second semiconductor light emission element 14 for emitting color light in the second wave length range, the frame electrode 11 for mounting the first and second semiconductor light emission elements, and the package 19 for molding them together. The first semiconductor light emission element 13 is composed of an InGaAlP series material having an active layer 34 composed of a plurality of composite luminous layers 54, 55, 56, and 57 for emitting color light with a different wavelength. Luminescence spectra from the plurality of luminous layers are partially overlapped with each other. Each of the plurality of composite luminous layers 54, 55, 56, and 57 is further composed of a plurality of luminous layers 58 for emitting color light with substantially the same wavelength.
A semiconductor light emitting device comprising:
A semiconductor light emitting device according to claim 1, wherein said plurality of composite luminous layers have a multiple quantum well structure in which luminous layers of a quantum well structure and barrier layers are alternately laminated.
A semiconductor light emitting device according to claim 1, wherein said first semiconductor light emission element is a first LED for emitting a yellow light and said second semiconductor light emission element is a second LED for emitting a blue light.
A semiconductor light emitting device according to claim 1, wherein said first LED has a n-InAlP clad layer formed on a n-type semiconductor substrate, an In(GaAl)P guide layer formed on said clad layer, an active layer composed of said plurality of composite luminous layers formed on said guide layer, an In(GaAl)P guide layer formed on said active layer, a p-InAlP clad layer formed on said guide layer, a p-GaAlAs current spreading layer formed on said clad layer, a p-GaAs contact layer formed on said current spreading layer, a n-type carrier current supply electrode formed on a bottom of a laminate thus formed, and a p-type carrier current supply electrode formed on a top of said laminate.
A semiconductor light emitting device according to claim 1, wherein said second LED is composed of a GaN series material.
A semiconductor light emitting device according to claim 1, wherein said first and second LED are mounted on a common frame electrode and are molded together.
A semiconductor light emitting device comprising:
Dependencies are inferred from the claim text.