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AssigneeKorea Research Institute of Standards and Science
InventorDae-Won Moon
Estimating the term…
Disclosed are a silicon thin film structure for optoelectronic devices and a method for manufacturing the same. The silicon thin film structure for optoelectronic devices, comprises a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; and a luminescent, rare earth element-doped silica layer on said silicon base layer, or a multi-layered structure consisting of a plurality of structural units, each comprising: a silicon base layer; a lower undoped silica buffer layer for restraining the silicon layer from absorbing emitted light on said silicon base layer; a luminescent, rare earth element-doped silica layer for emitting light on said lower undoped silica buffer layer; and an upper, undoped silica buffer layer for restraining the silicon from absorbing emitted light on said luminescent, doped silica layer. Hence, while the multi-layered structures of silicon/silica are set as a basic backbone, the undoped silica layer is interposed between the silicon layer and the erbium-doped silica layer, thereby increasing the total luminescence efficiency. Additionally, the silica layer is so thin in the multi-layered structures that high electric conductivity can be attained.
A silicon thin film structure for optoelectronic devices, comprising a multi-layered structure consisting of a plurality of structural units, each comprising:
A silicon thin film structure for optoelectronic devices, comprising a multi-layered structure consisting of a plurality of structural units, each comprising:
A method for fabricating a silicon thin film structure for optoelectronic devices, comprising the steps of:
A method for fabricating a silicon thin film structure for optoelectronic devices, comprising the steps of:
Dependencies are inferred from the claim text.