High-brightness blue-light emitting crystalline structure

A high-brightness blue-light emitting crystalline structure, comprising:

• a transparent substrate having a first and a coarsened second surface;
• a semiconductor stack layer formed on the first surface of the transparent substrate being provided at least with an N-GaN series semiconductor layer of group III-V compounds and a P-GaN series semiconductor layer of group III-V compounds;
• a coarsened mirror layer formed to cover the coarsened second surface of the transparent substrate;
• a first electrode provided for connection with the N-GaN series semiconductor layer of group III-V compounds;
• and
• a second electrode made of a light-permeable material being provided for connection with the P-GaN series semiconductor layer of group III-V compounds.

A high-brightness blue-light emitting crystalline structure, comprising:

• a transparent substrate having a first and a coarsened second surface;
• a plurality of multi-layer distributed Bragg reflectors (DBR) formed on the first surface of the transparent substrate;
• a semiconductor stack layer formed on the first surface of the transparent substrate being provided at least with an N-GaN series semiconductor layer of group III-V compounds and a P-GaN series semiconductor layer of group III-V compounds;
• a first electrode provided for connection with the N-GaN series semiconductor layer of group III-V compounds;
• and
• a second electrode made of a light-permeable material being provided for connection with the P-GaN series semiconductor layer of group III-V compounds.

A high-brightness blue-light emitting crystalline structure, comprising:

• a transparent substrate having a first and a coarsened second surface;
• a semiconductor stack layer formed on the first surface of the transparent substrate being provided at least with an N-GaN series semiconductor layer of group III-V compounds and a P-GaN series semiconductor layer of group III-V compounds;
• a first electrode provided for connection with the N-GaN series semiconductor layer of group III-V compounds;
• and
• a second electrode provided for connection with the P-GaN series semiconductor layer of group III-V compounds being a transparent conductive layer made of light permeable indium tin oxide (ITO).