Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
AssigneeMotorola, Inc.
InventorRavindranath Droopad
Life of this patent
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Abstract
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.
Claims39
A process for fabricating a semiconductor device structure comprising the steps of:
- providing a monocrystalline semiconductor substrate;
- epitaxially growing a monocrystalline oxide layer overlying the substrate, the oxide layer having a predetermined thickness;
- photolithographically patterning and etching the monocrystalline oxide layer to form a plurality of oxide mesas;
- and
- epitaxially growing a monocrystalline semiconductor layer overlying each of the oxide mesas.
A process for fabricating a compound semiconductor device structure comprising the steps of:
- providing a monocrystalline substrate comprising silicon;
- epitaxially growing a first monocrystalline layer comprising (Ba,Sr)TiO3 overlying the monocrystalline substrate;
- during the step of epitaxially growing a first monocrystalline layer, forming an amorphous layer comprising silicon oxide underlying the first monocrystalline layer;
- photolithographically patterning and etching the first monocrystalline layer to form a plurality of spaced apart oxide islands;
- epitaxially growing a second monocrystalline layer comprising a compound semiconductor material overlying each of the oxide islands;
- forming an integrated circuit at least partially in the substrate;
- forming a plurality of semiconductor devices at least partially in the second monocrystalline layer, one overlying each of the oxide islands;
- and
- electrically coupling the integrated circuit and each of the plurality of semiconductor devices.
A semiconductor device structure comprising:
- a monocrystalline semiconductor substrate;
- a plurality of islands of oxide formed overlying the substrate;
- and
- a layer of monocrystalline semiconductor material formed overlying the plurality of islands.
A semiconductor device structure comprising:
- a monocrystalline silicon substrate;
- an epitaxial layer of oxide overlying the silicon substrate, the epitaxial layer of oxide divided into a plurality of spaced apart oxide islands;
- a plurality of spaced apart monocrystalline compound semiconductor islands, one of the plurality overlying each of the oxide islands;
- an MOS circuit formed at least partially in the silicon substrate;
- and
- a semiconductor device formed in each of the monocrystalline compound semiconductor islands.
A semiconductor device structure comprising:
- a monocrystalline silicon substrate;
- an oxide layer overlying the silicon substrate;
- the oxide layer having a first thickness in a first region and a second thickness in a second region, the second thickness greater than the first thickness;
- a layer of monocrystalline compound semiconductor material overlying the oxide layer, the layer of monocrystalline semiconductor material having a third thickness in a third region overlying the first region and a fourth thickness in a fourth region overlying the second region, the fourth thickness greater than the third thickness.
A semiconductor device structure comprising:
- a monocrystalline silicon substrate;
- a channel region of an MOS transistor formed in the substrate;
- a first layer of monocrystalline (Ba,Sr)TiO3 overlying the substrate, the first layer divided into a plurality of oxide islands, one of the islands forming a gate dielectric overlying the channel region;
- a second layer of monocrystalline material comprising a compound semiconductor material selected from GaAs, AlGaAs, ZnSe, and ZnSSe overlying the plurality of oxide islands, and
- a plurality of active semiconductor devices formed in the second layer.
Dependencies are inferred from the claim text.