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AssigneeAdvanced Technology Materials, Inc.
InventorsJeffrey F. Roeder, Ing-Shin Chen, Steven Bilodeau, Thomas H. Baum
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A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
A modified Pb(Zr,Ti)O3 perovskite crystal material thin film, wherein the Pb(Zr,Ti)O3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of and Ta and the film thickness is less than 150 nm. The modified PZT deposition process comprises a liquid delivery MOCVD approach to thin-film growth from metalorganic precursors, such as metal (β-diketonates), dissolved in a solution to deposit the metal components of the thin film.
A modified Pb(Zr,Ti)O3 perovskite crystal material thin film, wherein the Pb(Zr,Ti)O3 perovskite crystal material which is modified by the presence of A-site substituents consisting of Sr, Ca, Ba and Mg.
Thin film piezoelectric PSZT.
Thin film ferroelectric PSZT.
Thin film piezoelectric PNZT.
A device selected from the group consisting of microelectromechanical devices and ferroelectric devices, comprising a modified Pb(Zr,Ti)O3 perovskite crystal material thin film including crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta.
A method of forming on a substrate a modified Pb(Zr,Ti)O3 perovskite crystal material thin film including crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta, comprising liquid delivery MOCVD of the thin film from metalorganic precursors of the metal components of the thin film.
Dependencies are inferred from the claim text.