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OwnerTadashi Takahashi, Naoyuki Takahashi +1inventors
InventorsTadashi Takahashi, Naoyuki Takahashi, Takato Nakamura
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The present invention provides a method for the preparation of an iron nitride thin film by which an iron nitride thin film having a high growth rate can be epitaxially grown under atmospheric pressure without using any expensive vacuum system or raw materials, and an iron nitride thin film prepared by this method. This method for the preparation of an iron nitride thin film comprises the steps of vaporizing an iron halide used as a raw material 51 for the preparation of a thin film and reacting the resulting iron halide gas with a nitrogen source gas 7 containing nitrogen to produce an iron nitride gas; and preparing an epitaxial film of iron nitride 63 on a substrate 61 by allowing the iron halide gas to become adsorbed on the substrate 61 under atmospheric pressure and grow epitaxially thereon.
A method for the preparation of an iron nitride thin film which comprises the step of preparing an epitaxial film of iron nitride on a substrate by reacting a vaporized iron halide with a nitrogen source gas under atmospheric pressure and depositing the resulting iron nitride on the substrate so as to cause epitaxial growth thereof.
A method for the preparation of an iron nitride thin film which comprises the steps of vaporizing an iron halide under atmospheric pressure and directing the resulting iron halide gas to a substrate;
A method for the preparation of an iron nitride thin film which comprises the steps of vaporizing an iron halide under atmospheric pressure and conveying the resulting iron halide gas to a substrate with the aid of a carrier gas;
Dependencies are inferred from the claim text.