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US 2002/0058424 A1Published application
Method to improve the uniformity and reduce the surface roughness of the silicon dielectric interface
AssigneeTexas Instruments Incorporated
InventorAntonio L. P. Rotondaro
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Abstract
The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region (180) on the upper surface (170) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.
Claims9
A method for forming a smooth interface between a silicon surface and a dielectric layer comprising:
- providing a silicon substrate with an upper surface;
- forming an amorphous region in said upper surface by exposing said upper surface to halogen species;
- and
- forming a dielectric layer on said amorphous region.
1 more element
A method for forming an interface between a silicon surface and a dielectric layer comprising:
- providing a silicon substrate with an upper surface;
- forming an amorphous region in said upper surface by exposing said upper surface to halogen species;
- forming a capping layer on said amorphous region;
- and
- forming a dielectric layer on capping layer.
2 more elements
Dependencies are inferred from the claim text.