Bond pad and wire bond
AssigneeLam Research Corporation
InventorsHugh Li, Diane J. Hymes
Life of this patent
Estimating the term…
Abstract
A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.
Claims37
A method, comprising:
- a) removing an oxide from a surface;
- and
- b) commencing application of a passivation layer to the surface within 5 seconds of the oxide removal.
A method, comprising:
- applying a liquid to a brush;
- applying to a semiconductor wafer surface the liquid with the brush;
- and
- forming a layer on the semiconductor wafer surface by a chemical reaction between the liquid and the semiconductor wafer surface.
A method, comprising:
- a) removing a first layer from a wafer surface with a first liquid applied with a first brush located in a brush system;
- and
- b) applying a second layer to the wafer surface with a second liquid applied with a second brush located in the brush system, the second liquid having a reaction with the wafer surface to form the second layer.
An apparatus, comprising:
- a supply line configured to apply a liquid to a brush;
- and
- the brush located over the surface of a wafer, the brush used to form a layer on the wafer surface with the liquid.
A method, comprising:
- a. removing an oxide layer from a wafer surface with a first liquid applied with a first brush located in a brush system;
- b. applying a passivation layer to the wafer surface with a second liquid applied with a second brush located in the brush system, the liquid having a reaction with the wafer surface to form the second layer;
- and
- c. applying a bond to the wafer surface by punching through the passivation layer.
Dependencies are inferred from the claim text.