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US 2002/0058412 A1Published application
Method for manufacturing a semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsAtsushi Ono, Takuro Asazu, Shinji Yamaguchi
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Abstract
The present invention includes a step of forming an Ni bump by non-electrolytic plating in an opening of a protecting film having an insulating property formed on an electrode pad which is provided on a semiconductor substrate, and a step of removing a plating solution residue remaining in a gap between the Ni bump and the protecting film. The plating solution residue is removed by cleaning in a cleaning solution containing hydrogen peroxide, or by applying an ultrasonic wave in a cleaning solution such as pure water.
Claims21
A method for manufacturing a semiconductor device, said method comprising:
- a step of forming a protrudent electrode by non-electrolytic plating in an opening of an insulating protecting film which is formed on an electrode pad provided on a semiconductor substrate;
- and
- a step of removing a plating solution residue remaining in a gap between the protrudent electrode and the insulating protecting film.
Dependencies are inferred from the claim text.