Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials
AssigneeTexas Instruments Incorporated
InventorsPatricia B. Smith, Mona M. Eissa
Life of this patent
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Abstract
A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
Claims50
A method of fabricating an electronic device formed on a semiconductor wafer, comprising the steps of:
- forming a layer of a first material in a fixed position relative to the wafer, wherein the first material has a dielectric constant less than 3.6;
- forming a photoresist layer in a fixed position relative to the layer of the first material;
- forming at least one void through the layer of the first material in response to the photoresist layer;
- and
- subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
A method of fabricating an electronic device formed on a semiconductor wafer, comprising the steps of:
- forming a layer of a first material in a fixed position relative to the wafer, wherein the first material is reactive with oxygen plasma;
- forming a photoresist layer in a fixed position relative to the layer of the first material;
- forming at least one void through the layer of the first material in response to the photoresist layer, wherein the step of forming at least one void further forms a polymeric residue in response to the photoresist layer;
- subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer;
- and
- removing the polymeric residue by subjecting the semiconductor wafer to a wet etch chemistry.
A method of fabricating an electronic device formed on a semiconductor wafer, comprising the steps of:
- forming a layer of a first material in a fixed position relative to the wafer, wherein the first material is reactive with oxygen plasma;
- forming a photoresist layer in a fixed position relative to the layer of the first material;
- forming at least one void through the layer of the first material in response to the photoresist layer, wherein the step of forming at least one void further forms a polymeric residue in response to the photoresist layer;
- subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer;
- and
- removing the polymeric residue by subjecting the semiconductor wafer to a dry plasma.
Dependencies are inferred from the claim text.