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US 2002/0058385 A1Published application
Semiconductor device and method for manufacturing the same
OwnerTaiji Nodainventor
Life of this patent
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Abstract
A semiconductor device includes a gate electrode formed on a semiconductor region via a gate insulative film, and an extension high concentration diffusion layer of a first conductivity type formed in the semiconductor region beside the gate electrode. A dislocation loop defect layer is formed in a region of the semiconductor region beside the gate electrode and at a position shallower than an implantation projected range of the extension high concentration diffusion layer.
Claims14
A semiconductor device, comprising:
- a gate electrode formed on a semiconductor region via a gate insulative film;
- an extension high concentration diffusion layer of a first conductivity type formed in the semiconductor region beside the gate electrode;
- and
- a dislocation loop defect layer formed in a region of the semiconductor region beside the gate electrode and at a position shallower than an implantation projected range of the extension high concentration diffusion layer.
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A method for manufacturing a semiconductor device, comprising:
- a first step of forming a gate electrode on a semiconductor region via a gate insulative film;
- a second step of forming an amorphous layer in an upper portion of the semiconductor region by implanting ion of a group IV element into the semiconductor region using the gate electrode as a mask;
- a third step of implanting a first impurity of a first conductivity type into the semiconductor region using the gate electrode as a mask with an implantation projected range such that the first impurity reaches a position deeper than the amorphous layer;
- and
- a fourth step of subjecting the semiconductor region to thermal annealing so as to form an extension high concentration diffusion layer of the first conductivity type through diffusion of the first impurity, the extension high concentration diffusion layer having a junction at a position deeper than the amorphous layer.
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Dependencies are inferred from the claim text.