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US 2002/0058362 A1Published application
Active matrix type display device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Yasushi Ogata
Life of this patent
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Abstract
An active matrix type display device having a sufficient auxiliary capacitance and a high aperture ratio is provided. In the device, an auxiliary capacitance (a black mask being in contact with an inorganic layer/the inorganic layer/a pixel electrode being in contact with the inorganic layer) is formed on an interlayer insulating film made of an organic resin film.
Claims9
A method of manufacturing an active matrix type display device, said method comprising the steps of:
- forming at least an inverted stagger thin film transistor on an insulating surface;
- forming a first interlayer insulating film to cover the inverted stagger thin film transistor;
- forming a second interlayer insulating film to cover the first interlayer insulating film;
- forming at least a black mask to cover the second interlayer insulating film;
- forming an inorganic layer to cover the black mask;
- selectively removing the black mask and the inorganic layer;
- forming a third interlayer insulating film to cover the black mask and the inorganic layer;
- selectively removing the third interlayer insulating film to expose a portion of the inorganic layer;
- and
- forming a transparent conductive film to cover the third interlayer insulating film,
- wherein an auxiliary capacitance is formed between the black mask and the transparent conductive film with the portion of the inorganic layer interposed therebetween.
8 more elements
A method of manufacturing an active matrix type display device, said method comprising the steps of:
- forming an inverted stagger thin film transistor on an insulating surface;
- forming a first interlayer insulating film to cover the inverted stagger thin film transistor;
- forming a second interlayer insulating film to cover the first interlayer insulating film;
- forming a black mask including a valve metal to cover the second interlayer insulating film;
- selectively removing the black mask;
- forming an inorganic layer by anodic oxidation of the black mask;
- and
- forming a transparent conductive film to cover the inorganic layer,
- wherein an auxiliary capacitance is formed between the black mask and the transparent conductive film with the inorganic layer therebetween.
6 more elements
Dependencies are inferred from the claim text.