Novel polymers and photoresist compositions comprising electronegative groups
AssigneeShipley Company, L.L.C.
InventorsAnthony Zampini, Charles R. Szmanda, Sungseo Cho, Gary N. Taylor
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Abstract
The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 157 nm. Particular polymers and photoresists of the invention include at least one electronegative group that reduces 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.
Claims74
A method for forming a photoresist relief image, comprising:
- (a) applying a photoresist composition on a substrate, the photoresist comprising a resin and a photoactive component, the resin comprising aromatic groups and electronegative groups;
- (b) exposing the photoresist to activating radiation and developing the exposed photoresist layer.
A method for forming a photoresist relief image, comprising:
- (a) applying a photoresist composition on a substrate, the photoresist comprising one or more photoacid generators and a halogenated aromatic polymer;
- (b) exposing the photoresist to radiation having a wavelength of about 170 nm or less and developing the exposed photoresist layer.
A photoresist composition comprising a photoactive component and a resin component that comprises a polymer comprising:
- 1) a polymer backbone comprising a plurality of carbon-carbon bond units,
- 2) a first electronegative group capable of withdrawing electrons from the polymer backbone;
- and optionally
- 3) a second electronegative group.
A positive chemically-amplified photoresist composition comprising one or more photoacid generator compounds and a fluorinated novolak resin or a fluorinated resin comprising polymerized vinyl phenol units.
A photoresist composition comprising a photoactive component and a resin binder comprising a polymer that comprises repeat units of:
- 1) a group comprising a polymer backbone comprising a first phenolic ring substituted with hydrogen or at least one first electronegative group, the backbone further comprising at least one methylene unit optionally substituted with at least one second electronegative group,
- 2) a group comprising a second phenolic ring substituted with hydrogen or at least one third electronegative group,
- 3) a group comprising a third phenolic ring substituted with hydrogen or at least one fourth electronegative group,
- wherein,
- each of the electronegative groups is the same or different, and each of the phenolic rings is the same or different.
The photoresist composition of any one claims 41 through 45 wherein the polymer comprises a polymerized cresol formaldehyde (novolak) unit.
The photoresist composition of any one of claims 41 through 46 wherein the polymer comprises a trifluoromethylphenol unit.
The photoresist of any one of claim 42 through 48 wherein the polymer comprises a first substituted novolak repeat unit, a substituted second novolak repeat unit and a third substituted novolak repeat unit, each of the first, second and third substituted novolak units being different.
A photoresist comprising a polymer, the polymer comprising units of the following formula:
- 48
- wherein A is a polymer backbone, B is a ballast moiety, C is an acidic moiety, and D is a chemically cleavable group wherein at least one of A, B, C or D comprises at least one electronegative group.
A method for producing a halogenated phenolic polymer comprising oxidizing a polymer and then halogenating the polymer.
A photoresist composition comprising one or more photoacid generator compounds and a halogenated polymer obtainable by steps comprising oxidizing a polymer and then halogenating the polymer.
Dependencies are inferred from the claim text.