III nitride epitaxial wafer and usage of the same
AssigneeNGK Insulators, Ltd.
InventorsTomohiko Shibata, Yukinori Nakamura, Mitsuhiro Tanaka
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Abstract
An epitaxial wafer has a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al element epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or over, formed on the underfilm. In a fabricating a III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through etching process, and subsequently, the III nitride film is formed.
Claims10
An epitaxial wafer comprising a base material made of a single crystal material, a III nitride underfilm including at least Al element epitaxially grown on the base material, and an InaGabN (a+b=1) film formed on the underfilm.
Usage of an epitaxial wafer including a base material made of a single crystal material, a III nitride underfilm including at least Al element epitaxially grown on the base material, and an InaGabN (a+b=1) film formed on the underfilm, comprising the steps of:
- removing at least the oxidized surface layer of the InaGabN film through etching process, and
- forming a III nitride film on the InaGabN film reduced in its thickness of the epitaxial wafer subsequent to the etching process.
Dependencies are inferred from the claim text.