Post-in-crown capacitor and method of manufacture
AssigneeTexas Instruments Incorporated
InventorsDARIUS L. CRENSHAW, WILLIAM F. RICHARDSON, RICK L. WISE
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Abstract
A post-in-crown capacitor is disclosed. The post-in-crown capacitor (60) includes a crown (44) coupled to a conductive via (20). A post (48) is disposed within the crown (44) and a capacitor insulation layer (50) is formed outwardly from the crown (44) and the post (48). A capacitor plate layer (52) is then formed outwardly from the capacitor insulation layer (50).
Claims20
A post-in-crown capacitor comprising:
- a conductive via;
- a crown coupled to the conductive via;
- a post disposed within the crown;
- a capacitor insulation layer disposed outwardly from the crown and post;
- and
- a capacitor plate layer disposed outwardly from the capacitor insulation layer.
A method of fabricating a post-in-crown capacitor comprising the steps of:
- forming a conductive via outwardly from a substrate;
- forming a crown coupled to the conductive via;
- forming a post within the crown;
- forming a capacitor insulation layer outwardly from the crown and post;
- and
- forming a capacitor plate layer outwardly from the capacitor insulation layer.
A method of fabricating a post-in-crown capacitor for an electronic device comprising the steps of:
- forming a dielectric layer outwardly from a substrate;
- forming an etch-stop layer outwardly from the dielectric layer;
- forming a first mask outwardly from the dielectric layer that exposes a portion of the etch-stop layer;
- anisotropically etching the exposed portion of the etch-stop layer to expose a portion of the dielectric layer;
- anisotropically etching the exposed portion of the dielectric layer to expose a portion of the substrate;
- removing the first mask to expose the etch-stop layer;
- forming a conductive via layer outwardly from the exposed portion of the substrate and the etch-stop layer;
- removing the conductive via layer formed outwardly from the etch-stop layer, the remaining portion of the conductive via layer forming a conductive via;
- forming a first molding layer outwardly from a etch-stop layer;
- forming a second mask outwardly from the first molding layer that exposes a portion of the first molding layer;
- removing the exposed portion of the first molding layer to expose the conductive via;
- removing the second mask;
- forming a crown layer outwardly from the exposed portion of the conductive via and the first molding layer;
- forming a second molding layer outwardly from the crown layer;
- anisotropically etching the second molding layer to form a core, the core having a center cavity that exposes a portion of the crown layer;
- anisotropically etching the crown layer to form a crown, the crown having a post cavity that exposes a portion of the conductive via;
- forming a post layer outwardly from the exposed portion of the conductive via which fills the post cavity and the center cavity;
- removing a portion of the post layer and the core to expose the second molding layer and form a post;
- removing the core and the first molding layer to expose the dielectric layer, wherein the crown and the post are free-standing;
- forming a capacitor insulation layer outwardly from the crown and post;
- and
- forming a capacitor plate layer outwardly from the capacitor insulation layer.
Dependencies are inferred from the claim text.