US 2002/0057403 A1 · Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Abstract

In a TFT array substrate 10 of an electrooptical device, a scanning line 3a, a drain electrode 11, a first light shield layer 13, and a data line 3a are laminated over a channel region 1a′ of a TFT 30 and a second light shield layer 14 is laminated beneath the channel region 1a′. A side wall formation trench 16 is formed beside the channel region 1a′ of the TFT 30, and in the side wall formation trench a conductive layer having a light shield property is concurrently formed with the first light shield layer 13 thereby a light shield side wall 131 is formed. By three-dimensionally blocking light's entry towards the channel region 1a′, obliquely or laterally incident light is prevented from entering the channel region of a pixel switching TFT, and the TFT 30 is free from erratic operations and reliability degradation.

Claims36

Dependent claims

An electrooptical device comprising:

a first substrate;
a pixel electrode arranged above the first substrate;
a thin-film transistor arranged above the first substrate and connected to the pixel electrode;
and
a first light shield layer arranged over a gate electrode of the thin-film transistor formed over and facing a channel region of the thin-film transistor with a gate insulator interposed therebetween,
the first light shield layer is formed, laterally surrounding the channel region as a light shield side wall.

3 more elements

A method for manufacturing an electrooptical device including a first substrate, a pixel electrode arranged on the first substrate, and a thin-film transistor arranged on the first substrate and connected to the pixel electrode, the method comprising

forming, on the surface of the first substrate, the thin-film transistor including a channel region, a gate insulator formed on the channel region, and a gate electrode on the gate insulator, with the gate electrode facing the channel region with the gate insulator interposed therebetween,
depositing at least one interlayer insulator covering the thin-film transistor subsequent to the formation of the thin-film transistor, forming, in the interlayer insulator, a side wall formation trench that runs by the side of the channel region of the thin-film transistor, and
depositing a first light shield layer covering at least the channel region of the thin-film transistor, wherein the first light shield layer is also deposited in the side wall formation trench as a light shield side wall when the first light shield layer is formed.

An electrooptical device comprising a pair of first and second substrates with an electrooptical material interposed therebetween, and including above the first substrate:

a plurality of pixel electrodes arranged two-dimensionally, including a first pixel electrode group which is driven by an alternating driving method with a first period, and a second pixel electrode group which is driven in an alternating driving method with a second period complimentary to the first period;
a thin-film transistor connected to each pixel electrode;
a wiring connected to each thin-film transistor;
a light shield member which three-dimensionally covers the thin-film transistor and the wiring in a gap area between adjacent pixel electrodes in a plan view and protrudes in a ridge a portion of the gap area between adjacent pixel electrodes of different pixel electrode groups;
and including above the second substrate, a counter electrode facing the plurality of pixel electrodes.

2 more elements

Dependencies are inferred from the claim text.

Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Life of this patent

Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Life of this patent

Abstract

Claims36