Method for forming photoresist pattern and manufacturing method of magnetoresistive effect thin-film magnetic head
AssigneeTDK Corporation
InventorsNoriyuki Ito, Koichi Terunuma, Satoshi Tsukiyama
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Abstract
A method for forming a photoresist pattern, includes a step of forming a photoresist pattern having a certain width, and a step of performing thereafter ion milling with respect to side walls of the formed photoresist pattern by using an ion beam with a large incident angle so as to reduce the width of the formed photoresist pattern.
Claims6
A method for forming a photoresist pattern, comprising the steps of:
- forming a photoresist pattern having a certain width;
- and
- thereafter, performing ion milling with respect to side walls of said formed photoresist pattern by using an ion beam with a large incident angle so as to reduce the width of said formed photoresist pattern.
A manufacturing method of a magnetoresistive effect thin-film magnetic head, comprising the steps of:
- depositing a layer for forming magnetic domain control layers by using a photoresist pattern having a certain width;
- thereafter, performing ion milling with respect to side walls of said photoresist pattern by using an ion beam with a large incident angle so as to reduce the width of said photoresist pattern;
- and
- depositing a layer for forming lead conductor layers by using said photoresist pattern with the reduced width.
A manufacturing method of a magnetoresistive effect thin-film magnetic head, comprising the steps of:
- forming a photoresist pattern having a certain width on a magnetoresistive effect layer;
- performing ion milling with respect to said magnetoresistive effect layer by using said photoresist pattern to form a patterned magnetoresistive effect layer;
- depositing a layer for forming magnetic domain control layers by using said photoresist pattern;
- thereafter, performing ion milling with respect to side walls of said photoresist pattern by using an ion beam with a large incident angle so as to reduce the width of said photoresist pattern;
- and
- depositing a layer for forming lead conductor layers by using said photoresist pattern with the reduced width.
Dependencies are inferred from the claim text.