Method for fabricating thin-film transistor

Abstract

Threshold voltage (Vth) control in thin-film transistors is facilitated. The thin-film transistor has a laminate structure comprising a thin-film polycrystalline semiconductor, a gate oxide film as formed adjacent to one surface of the semiconductor film, and a gate electrode as laminated on the thin-film polycrystalline semiconductor via the gate oxide film. The method for fabricating the thin-film transistor comprises an implantation step of selectively implanting a dopant in the thin-film semiconductor to form a source region and a drain region of the thin-film transistor, and a rapid thermal annealing (RTA) step of activating the implanted dopant through controlled RTA for Vth control in the thin-film transistor. The RTA step comprises gradually heating the insulating substrate, then exposing the thin-film semiconductor to ultraviolet rays for rapidly heating it, and thereafter gradually cooling it.

Dependencies are inferred from the claim text.